TC 47

Semiconductor devices

 

P-Members vote

P-Members

Voting
P-Members

In favour
In favour %
Criteria
Result
9 9 100 >=66.7% APPROVED

All Votes

Total

Votes Cast
Total

Against
Against %
Criteria
Result
12 0 0 <=25% APPROVED

 Illustration: Voting

Voting Result

APPROVED

Document 47/2687/FDIS

 

Project : IEC 63229:2021 ED1

IEC 63229 ED1: Semiconductor devices – Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

 

Reference Circulation date Closing date Downloads
47/2687/FDIS 2021-02-05 2021-03-19

Compilation of Comments
CC file    
 
export to xls file

Result of Voting

Country
Status
Received
Vote
Comments
Austria P 2021-03-17 Y -
Belarus O 2021-03-19 Y -
Belgium P 2021-03-19 A -
Brazil O -
Bulgaria O -
China P 2021-03-08 Y -
Czech Republic O -
Democratic People's Republic of Korea - 2021-03-15 Y -
Denmark O -
Finland O 2021-02-08 A -
France P 2021-03-18 A -
Germany P 2021-03-08 Y -
Greece - 2021-03-19 A -
Hungary O -
India O -
Iran O -
Ireland O -
Israel P 2021-03-18 A -
Italy P 2021-03-18 Y -
Japan P 2021-03-15 Y Y
Korea, Republic of P 2021-03-18 Y -
Netherlands P 2021-03-16 A -
Norway O -
Pakistan P 2021-03-16 Y -
Philippines, Rep. of the O -
Poland O -
Portugal - 2021-03-19 A -
Qatar - 2021-03-14 Y -
Romania O -
Russian Federation P 2021-03-19 Y -
Serbia O -
Singapore P 2021-03-15 A -
Spain O -
Sweden O -
Switzerland O 2021-02-09 A -
Thailand O -
Turkey O -
Ukraine O -
United Kingdom P 2021-03-08 A -
United States of America P 2021-03-19 Y -

NOTES:



  1. Vote: Does the National Committee agree to publish the FDIS as an International Standard?
    Y = In favour; N = Against; A = Abstention.

  2. Abstentions are not taken into account when totalizing the votes.

  3. P-members not voting: (0).


*Comments not included in the compiled table, available as a separate file, because they were not submitted using the template Form-Comments.