International Standards and Conformity Assessment for all electrical, electronic and related technologies

SC 47E

Discrete semiconductor devices

 

Detail

Committee
Working Groups
Project Leader

Current

Status

Frcst Pub

Date

Stability

Date

SC 47EWG 3Mr Shuji MiyashitaPPUB2019-112024

History

Stage
Document
Downloads
Decision Date
Target Date
AMW
47E/547/RR PDF file 84 kB
2016-05-26 
1CD
47E/548/CD PDF file 888 kB
2016-05-272016-05
A2CD
47E/561/CC Word file 310 kB
PDF file 243 kB
2016-11-042016-09
2CD
47E/572/CD
PDF file 970 kB
2017-05-192017-05
PCC
2017-08-112017-08
ACDV
47E/594/CC PDF file 193 kB
Word file 178 kB
2017-12-012018-05
TCDV
2018-03-212018-05
CCDV
47E/605/CDV
PDF file 977 kB
2018-05-112018-05
PRVC
2018-08-032018-08
AFDIS
47E/630/RVC PDF file 193 kB
Word file 147 kB
2018-11-022019-05
TFDIS
2019-03-252019-05
DECFDIS
2019-03-252019-05
RFDIS
2019-03-272019-04
CFDIS
47E/656/FDIS  
2019-04-262019-06
AFDIS
2019-05-152019-05
TFDIS
2019-05-21 
DECFDIS
2019-07-042019-07
RFDIS
2019-07-152019-07
CFDIS
47E/675/FDIS

2019-08-162019-10
PRVD
2019-09-272019-09
APUB
47E/684/RVD PDF file 201 kB
2019-10-042019-10
BPUB
2019-10-042019-10
PPUB
2019-11-132019-11
  

Abstract

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
  1. reverse-blocking IGBT and its related technical contents have been added;
  2. reverse-conducting IGBT and its related technical contents have been added;
  3. some parts of the previous edition have been amended, combined or deleted.

Project

IEC 60747-9:2019 ED3

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)