TC 47

Review report of IEC 60749-10 Ed.1: Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock

IEC 63275-1 ED1: Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

IEC 63275-2 ED1: Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

IEC 63284 ED1: Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

PNW 47-2689 ED1: Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module

Result of Voting on 47/2676/FDIS - IEC 62830-7 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7- Linear sliding mode triboelectric energy harvesting

IEC 63229 ED1: Semiconductor devices – Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

IEC 63287-2 ED1: Semiconductor devices – Guidelines for reliability qualification plans – Part 2: Concept of mission profile

IEC 62830-7 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7- Linear sliding mode triboelectric energy harvesting

Unconfirmed minutes of TC 47 plenary meeting held online on 2020-11-20

PNW 47-2685 ED1: Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

Result of Voting on 47/2665/NP - PNW 47-2665 ED1: Semiconductor devices – Semiconductor devices for IOT system – Part 1: Test method of sound variation detection

PNW 47-2683 ED1: Semiconductor devices - Measurement and evaluation methods of kinetic energy harvesting devices under practical vibration environment - Part 2: Human arm swing motion

List of decisions taken at the meeting of  47 held online on 2020-11-20

Result of Voting on 47/2621/CDV - IEC 63229 ED1: Semiconductor devices – The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Compilation of Comments on 47/2622/CD - IEC 63275-1 ED1: Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

Compilation of Comments on 47/2623/CD - IEC 63275-2 ED1: Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation by body diode operating

Compilation of Comments on 47/2624/CD - IEC 63284 ED1: Semiconductor devices - Reliability test method of on-stress reliability by inductive load switching for gallium nitride transistors

IEC 62830-7 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7- Linear sliding mode triboelectric energy harvesting

IEC TR 63357 ED1: Semiconductor devices - Standardization roadmap of fault test method for automotive vehicles

Result of Voting on 47/2668/FDIS - IEC 62830-5 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices

IEC 62435-9 ED1: Electronic components – Long-term storage of electronic semiconductor devices - Part 9: Special Cases

PNW 47-2671 ED1: Semiconductor devices - Fault test method for automotive vehicles - Part 1: General conditions and definitions

Replaced by 47/2670A/DL

IEC 60749-28 ED2: Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level

IEC 62830-5 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices

Result of Voting on 47/2664/FDIS - IEC 62435-7 ED1: Electronic components - Long-term storage of electronic semiconductor devices – Part 7: Micro-electromechanical devices

IEC 60749-28 ED2: Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level

IEC 62830-8 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 8- Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics

IEC 62435-7 ED1: Electronic components - Long-term storage of electronic semiconductor devices – Part 7: Micro-electromechanical devices

IEC 62830-5 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices

IEC 60749-37 ED2: Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer

IEC 60749-39 ED2: Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

IEC 63244-1 ED1: Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1 : General requirements and specifications

Revised draft agenda for the TC 47 meeting to be held online on 2020-11-20 (from 12:00 to 16:00 UTC)

Review of Active Participation of P-members in the Work of  47 

IEC 62435-7 ED1: Electronic components - Long-term storage of electronic semiconductor devices – Part 7: Micro-electromechanical devices

PNW 47-2665 ED1: Semiconductor devices – Semiconductor devices for IOT system – Part 1: Test method of sound variation detection

Result of Voting on 47/2580/CDV - IEC 62830-7 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7- Linear sliding mode triboelectric energy harvesting

Result of Voting on 47/2635/NP - PNW 47-2635: Semiconductor devices – Guidelines for reliability qualification plans – Part 2: Concept of Mission profile

Result of Voting on 47/2614/CDV - IEC 63287-1 ED1: Semiconductor devices – Generic semiconductor qualification guidelines – Part 1: Guidelines for LSI reliability qualification

Next meeting of  47 and its Subcommittees 47A, 47D, 47E and 47F originally taking place in Frankfurt, Germany from 16 to 20 November 2020 is now to be a virtual meeting

Review and Maintenance – call for comments/ proposals on publications coming up for review and a call for experts

Draft agenda for the TC 47 meeting to be held online on 2020-11-20 (from 12:00 to 16:00 UTC)

Compilation of Comments on 47/2601/CD - IEC 62830-8 ED1: Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 8- Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics

IEC 62951-9 ED1: Semiconductor devices - Flexible and stretchable semiconductor devices – Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells

IEC 62951-8 ED1: Semiconductor devices - Flexible and stretchable semiconductor devices – Part 8: Test method for stretchability, flexibility and stability of flexible resistive memory

Review report of IEC 60749-37 Ed.1: Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer

Review report of IEC 60749-39 Ed.1: Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

Result of Voting on 47/2596/NP - PNW 47-2596: Future IEC 62951-8: Semiconductor devices - Flexible and strechable semiconductor devices – Part 8: Test method for stretchability, flexibility, and stability of flexible resistive memory

Result of Voting on 47/2617/NP - PNW 47-2617: Future IEC 62435-9: Electronic components – Long-term storage of electronic semiconductor devices - Part 9: Special Cases

Result of Voting on 47/2634/FDIS - IEC 60749-20 ED3: Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

Result of Voting on 47/2633/FDIS - IEC 60749-30 ED2: Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

Result of Questionnaire on 47/2632/Q: Merging WG 2 with WG 3 and nomination of co-onvenor in  47/ 2

Result of Voting on 47/2631/FDIS - IEC 60749-41 ED1: Semiconductor devices - Mechanical and climatic test methods - Part 41: Standard reliability testing methods of non-volatile memory devices

Result of Voting on 47/2627/FDIS - IEC 62373-1 ED1: Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Result of Voting on 47/2628/FDIS - IEC 63068-3 ED1: Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Result of Voting on 47/2630/FDIS - IEC 60749-15 ED3: Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices

Result of Voting on 47/2610/NP - PNW 47-2610: Future IEC 62951-9: Semiconductor devices - Flexible and strechable semiconductor devices – Part 9: Performance and reliability testing methods of  one transistor and one resistor (1T1R) resistive memory cells

Result of Voting on 47/2594/NP - PNW 47-2594: Semiconductor devices - Semiconductor devices for IoT-based fire detection system– Part 1: Test method of semiconductor devices for IoT-based sound variation fire detection system

IEC 60749-30 ED2: Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

IEC 60749-20 ED3: Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

Compilation of Comments on 47/2592/CD - IEC 63244-1 ED1: Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1 : General requirements and specifications

IEC 60749-41 ED1: Semiconductor devices - Mechanical and climatic test methods - Part 41: Standard reliability testing methods of non-volatile memory devices

IEC 60749-15 ED3: Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices

IEC 60749-20 ED3: Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

PNW 47-2635: Semiconductor devices – Guidelines for reliability qualification plans – Part 2: Concept of Mission profile

IEC 60749-30 ED2: Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

IEC 60749-41 ED1: Semiconductor devices - Mechanical and climatic test methods - Part 41: Standard reliability testing methods of non-volatile memory devices

Merging WG 2 with WG 3 and nomination of co-convenor in TC 47 / WG 2  

IEC 60749-15 ED3: Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices

IEC 63229 ED1: Semiconductor devices – The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

IEC 62373-1 ED1: Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

IEC 63068-3 ED1: Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Result of Voting on 47/2562/CDV - IEC 60749-30 ED2: Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

Review report of IEC 60749-28 Ed.1: Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level

Result of Voting on 47/2563/CDV - IEC 60749-20 ED3: Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

IEC 63275-1 ED1: Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

IEC 63275-2 ED1: Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation by body diode operating

IEC 63284 ED1: Semiconductor devices - Reliability test method of on-stress reliability by inductive load switching for gallium nitride transistors

IEC 63287-1 ED1: Semiconductor devices – Generic semiconductor qualification guidelines – Part 1: Guidelines for LSI reliability qualification

Result of Voting on 47/2588/CDV - IEC 63068-3 ED1: Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Compilation of Comments on 47/2599/CD - IEC 63229 ED1: Semiconductor devices – The classification of defects in gallium nitride epitaxial film on silicon carbide substrate