International Standards and Conformity Assessment for all electrical, electronic and related technologies

SC 47F

Micro-electromechanical systems

 
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SC 47F Working Documents since 2018-11-18

Reference, Title
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Circulation

Date

Closing

Date

CENELEC

Voting /

Comment

Of interest to

Committees

47F/353/RM

Unconfirmed minutes of SC 47F plenary meeting held at Room “411-412”, EXPO Center, Shanghai, China on October 17, 2019, from 9:00 am to 12:00 pm

2019-11-15 N/A
47F/350A/RVC

Result of Voting on 47F/336/CDV - IEC 62047-37 ED1: Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

2019-11-08 N
TC 49
47F/352/RVD

Result of Voting on 47F/344/FDIS - IEC 62047-35 ED1: Semiconductor devices – Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices

2019-11-08 Y
47F/351/DL

List of decisions taken at the meeting of SC 47F, held in Shanghai, China on 17 October 2019

2019-11-01 N/A
47F/348/RVN

Result of Voting on 47F/341/NP - PNW 47F-341: Semiconductor devices - Micro-electromechanical devices - Part 40:Test methods of Micro-electromechanical inertial shock switch threshold

2019-10-25 U
47F/349/RVN

Result of Voting on 47F/340/NP - PNW 47F-340: Semiconductor devices - Micro-electromechanical devices - Part 39:Terms and definitions of Micro-electromechanical inertial shock switch

2019-10-25 U
47F/350/RVC

Result of Voting on 47F/336/CDV - IEC 62047-37 ED1: Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

2019-10-25 N
TC 49
47F/347/RVN

Result of Voting on 47F/342/NP - PNW 47F-342: Semiconductor devices - Micro-electromechanical devices – Part 41: RF MEMS Circulator and Isolator

2019-10-11 N
47F/346/RVN

Result of Voting on 47F/339/NP - PNW 47F-339: Semiconductor devices – Micro-electromechanical devices – Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection

2019-10-04 U
47F/344/FDIS

IEC 62047-35 ED1: Semiconductor devices – Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices

2019-09-20 2019-11-01 Y Voting Result
47F/338A/DA

Revised draft agenda for the meeting to be held in Shanghai, China, on 2019-10-17 (starting time: 9:00 to approximate finishing time: 12:00)

2019-09-13 N/A
47F/345/INF

Report of comments on 47F/337/DC: Maintenance – call for comments / proposals on publications coming up for review and a call for experts

2019-09-13 N/A
47F/343/INF

Review of Active Participation of P-members in the Work of SC 47F

2019-09-06 N/A
47F/342/NP

PNW 47F-342: Semiconductor devices - Micro-electromechanical devices – Part 41: RF MEMS Circulator and Isolator

2019-08-09 2019-10-04 N Voting Result
47F/340/NP

PNW 47F-340: Semiconductor devices - Micro-electromechanical devices - Part 39:Terms and definitions of Micro-electromechanical inertial shock switch

2019-07-26 2019-09-20 U Voting Result
47F/341/NP

PNW 47F-341: Semiconductor devices - Micro-electromechanical devices - Part 40:Test methods of Micro-electromechanical inertial shock switch threshold

2019-07-26 2019-09-20 U Voting Result
47F/336/CDV

IEC 62047-37 ED1: Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

2019-07-19 2019-10-11 N Voting Result
TC 49
47F/339/NP

PNW 47F-339: Semiconductor devices – Micro-electromechanical devices – Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection

2019-07-05 2019-09-27 U Voting Result
47F/335A/RVC

Result of Voting on 47F/320/CDV - IEC 62047-35 ED1: Semiconductor devices – Micro-electromechanical devices – Part 35: Test method of electrical characteristics under bending deformation for flexible and foldable electro-mechanical devices

2019-06-28 Y
47F/337/DC

Maintenance – call for comments/ proposals on publications coming up for review and a call for experts

2019-06-21 2019-09-06 N/A Report of Comments
47F/338/DA

Draft agenda for the meeting to be held in Shanghai, China, on 2019-10-17 (starting time: 9:00 to approximate finishing time: 12:00)

2019-06-21 N/A
47F/330A/CC

Compilation of Comments on 47F/324/CD - IEC 62047-37 ED1: Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

2019-05-31 N
TC 49
47F/335/RVC

Result of Voting on 47F/320/CDV - IEC 62047-35 ED1: Semiconductor devices – Micro-electromechanical devices – Part 35: Test method of electrical characteristics under bending deformation for flexible and foldable electro-mechanical devices

2019-03-22 Y
47F/331/RVD

Result of Voting on 47F/326/FDIS - IEC 62047-31 ED1: Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

2019-03-15 N
47F/332/RVD

Result of Voting on 47F/327/FDIS - IEC 62047-33 ED1: Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device

2019-03-15 N
47F/333/RVD

Result of Voting on 47F/328/FDIS - IEC 62047-34 ED1: Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer

2019-03-15 N
47F/334/RVD

Result of Voting on 47F/329/FDIS - IEC 62047-36 ED1: Semiconductor devices – Micro-electromechanical devices – Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films

2019-03-15 N
TC 49
47F/330/CC

Compilation of Comments on 47F/324/CD - IEC 62047-37 ED1: Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

2019-03-01 N
TC 49
47F/326/FDIS

IEC 62047-31 ED1: Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

2019-01-25 2019-03-08 N Voting Result
47F/327/FDIS

IEC 62047-33 ED1: Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device

2019-01-25 2019-03-08 N Voting Result
47F/328/FDIS

IEC 62047-34 ED1: Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer

2019-01-25 2019-03-08 N Voting Result
47F/329/FDIS

IEC 62047-36 ED1: Semiconductor devices – Micro-electromechanical devices – Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films

2019-01-25 2019-03-08 N Voting Result
TC 49
47F/325/RVD

Result of Voting on 47F/322/FDIS - IEC 62047-32 ED1: Semiconductor devices - Micro-electromechanical devices - Part 32: Test method for the nonlinear vibration of the MEMS resonators

2018-12-28 N
47F/320/CDV

IEC 62047-35 ED1: Semiconductor devices – Micro-electromechanical devices – Part 35: Test method of electrical characteristics under bending deformation for flexible and foldable electro-mechanical devices

2018-12-21 2019-03-15 Y Voting Result
47F/319A/RVN

Result of Voting on 47F/316/NP - PNW 47F-316: Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

2018-11-30 N
TC 49
47F/324/CD

IEC 62047-37 ED1: Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

2018-11-30 2019-02-22 N Report of Comments
TC 49
47F/311A/RVC

Result of Voting on 47F/304/CDV - IEC 62047-33 ED1: Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device

2018-11-23 N
47F/312A/RVC

Result of Voting on 47F/305/CDV - IEC 62047-34 ED1: Semiconductor devices - Micro-electromechanical devices - Part 34: Test method for MEMS piezoresistive pressure-sensitive device on wafer

2018-11-23 N
47F/313A/RVC

Result of Voting on 47F/306/CDV - IEC 62047-36 ED1: Semiconductor devices – Micro-electromechanical devices – Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films

2018-11-23 N
TC 49
47F/315A/RVC

Result of Voting on 47F/308/CDV - IEC 62047-31 ED1: Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

2018-11-23 N
47F/323/RM

Unconfirmed minutes of SC 47F plenary meeting held at Room “316, 317 EXC1”, BEXCO (Busan Exhibition & Convention Center), Busan, Korea on October. 18, 2018, from 9:30 am to 12:30 pm

2018-11-23 N/A