International Standards and Conformity Assessment for all electrical, electronic and related technologies

TC 47

Semiconductor devices

 
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TC 47 Work programme (21)

Project

Reference

Document

Reference

Init.

Date

Current

Stage

Next

Stage

Working

Group

Project

Leader

Fcst. Publ.

Date

PNW 47-2578

Semiconductor devices - Reliability test method of on-stress reliability by inductive load switching for gallium nitride transistors

47/2578/NP PRVN
  • PRVN
  • Preparation of RVN

2019-08

2019-09

WG 5 2022-03
PNW 47-2594

Semiconductor devices - Semiconductor devices for IoT-based fire detection system– Part 1: Test method of semiconductor devices for IoT-based sound variation fire detection system

47/2594/NP PNW
  • PNW
  • New Work Item Proposal

2019-09

PRVN
  • PRVN
  • Preparation of RVN document

2019-12

WG 6 Hojun Ryu 2021-12
PNW 47-2596

Future IEC 62951-8: Semiconductor devices - Flexible and strechable semiconductor devices – Part 8: Test method for stretchability, flexibility, and stability of flexible resistive memory

47/2596/NP PNW
  • PNW
  • New Work Item Proposal

2019-10

PRVN
  • PRVN
  • Preparation of RVN document

2019-12

WG 6 Namsu Kim 2022-05
PNW 47-2610

Future IEC 62951-9: Semiconductor devices - Flexible and strechable semiconductor devices – Part 9: Performance and reliability testing methods of  one transistor and one resistor (1T1R) resistive memory cells

prePNW
  • prePNW
  • Preparation of NP

2019-11

PNW
  • PNW
  • Proposed New Work

WG 6 Deok-kee Kim 2022-07
IEC 60749-15 ED3

Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices

47/2575/CDV 2019-05 AFDIS
  • AFDIS
  • Approved for FDIS

2019-11

TFDIS
  • TFDIS
  • Translation of FDIS

2020-02

WG 2 Jim Lynch 2020-10
IEC 60749-20 ED3

Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

47/2563/CDV 2019-04 PRVC
  • PRVC
  • Preparation of RVC

2019-08

2019-11

WG 2 Jim Lynch 2020-10
IEC 60749-30 ED2

Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

47/2562/CDV 2019-04 PRVC
  • PRVC
  • Preparation of RVC

2019-08

2019-11

WG 2 Jim Lynch 2020-10
IEC 60749-41 ED1

Semiconductor devices - Mechanical and climatic test methods - Part 41: Standard reliability testing methods of non-volatile memory devices

47/2584/CDV 2015-10 PRVC
  • PRVC
  • Preparation of RVC

2019-11

2020-02

WG 2 Jim Lynch 2020-10
IEC 62373-1 ED1

Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI Test for MOSFET

47/2570/CDV 2017-08 AFDIS
  • AFDIS
  • Approved for FDIS

2019-11

TFDIS
  • TFDIS
  • Translation of FDIS

2020-05

WG 5 Hideya Matsuyama 2021-01
IEC 62435-3 ED1

Electronic components – Long-term storage of electronic semiconductor devices – Part 3: Data

47/2608/FDIS 2011-03 CFDIS
  • CFDIS
  • Draft circulated as FDIS

2019-11

PRVD
  • PRVD
  • Preparation of RVD document

2020-01

WG 3 Alan Lucero 2020-03
IEC 62435-7 ED1

Long-term storage of electronic components – Part 7: Micro-electromechanical devices

47/2555/CDV 2018-06 AFDIS
  • AFDIS
  • Approved for FDIS

2019-10

WG 3 Alan Lucero 2020-07
IEC 62435-8 ED1

Electronic components – Long-term storage of electronic semiconductor devices – Part 8: Passive electronic devices

47/2595/CDV 2018-06 CCDV
  • CCDV
  • Draft circulated as CDV

2019-11

PRVC
  • PRVC
  • Preparation of RVC

2020-02

WG 3 Alan Lucero 2021-01
IEC 62779-4 ED1

Semiconductor devices - Semiconductor interface for human body communication- Part 4: Capsule endoscope

47/2600/FDIS 2017-04 CFDIS
  • CFDIS
  • Draft circulated as FDIS

2019-11

PRVD
  • PRVD
  • Preparation of RVD document

2019-12

WG 6 Byoung Nam Lee 2020-02
IEC 62830-5 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices

47/2545/CDV 2015-11 AFDIS
  • AFDIS
  • Approved for FDIS

2019-11

TFDIS
  • TFDIS
  • Translation of FDIS

2020-02

WG 7 Namsu Kim 2020-10
IEC 62830-7 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7- Linear sliding mode triboelectric energy harvesting

47/2580/CDV 2018-07 PRVC
  • PRVC
  • Preparation of RVC

2019-10

2020-01

WG 7 Jae Yeong Park 2020-09
IEC 62830-8 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 8- Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics

47/2601/CD 2019-04 CD
  • CD
  • Draft circulated as CD

2019-11

PCC
  • PCC
  • Preparation of CC document

2020-01

WG 7 Jae Yeong Park 2021-06
IEC 63068-3 ED1

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

47/2588/CDV 2018-08 CCDV
  • CCDV
  • Draft circulated as CDV

2019-09

PRVC
  • PRVC
  • Preparation of RVC

2019-12

WG 5 Junji SENZAKI 2020-11
IEC 63229 ED1

Semiconductor devices – The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

47/2599/CD 2018-11 CD
  • CD
  • Draft circulated as CD

2019-10

PCC
  • PCC
  • Preparation of CC document

2020-01

WG 5 Zhihong Feng 2021-04
IEC 63244-1 ED1

Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1 : General requirements and specifications

47/2592/CD 2019-04 CD
  • CD
  • Draft circulated as CD

2019-09

PCC
  • PCC
  • Preparation of CC document

2019-12

WG 7 Cheolung Cha 2021-02
IEC 63275-1 ED1

Semiconductor devices - Reliability test method for silicon carbide descrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

47/2576A/NP 2019-11 ACD
  • ACD
  • Approved for CD

2019-11

CD
  • CD
  • Draft circulated as CD

2019-12

WG 5 KOJI YAMAGUCHI 2022-03
IEC 63275-2 ED1

Semiconductor devices - Reliability test method for silicon carbide descrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation by body diode operating

47/2577A/NP 2019-11 ACD
  • ACD
  • Approved for CD

2019-11

CD
  • CD
  • Draft circulated as CD

2019-12

WG 5 KOJI YAMAGUCHI 2022-03