TC 47

Semiconductor devices

 
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TC 47 Work programme (20)

Project

Reference

Document

Reference

Init.

Date

Current

Stage

Next

Stage

Working

Group

Project

Leader

Fcst. Publ.

Date

PNW 47-2671 ED1

Semiconductor devices - Fault test method for automotive vehicles - Part 1: General conditions and definitions

47/2671/NP PNW
  • PNW
  • New work item proposal

2020-12

PRVN
  • PRVN
  • Preparation of RVN

2021-03

WG 1 Wonjong KIM 2023-12
PNW 47-2683 ED1

Semiconductor devices - Measurement and evaluation methods of kinetic energy harvesting devices under practical vibration environment - Part 2: Human arm swing motion

47/2683/NP PNW
  • PNW
  • New work item proposal

2021-01

PRVN
  • PRVN
  • Preparation of RVN

2021-04

WG 7 Yuji SUZUKI 2023-08
PNW 47-2685 ED1

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

47/2685/NP PNW
  • PNW
  • New work item proposal

2021-01

PRVN
  • PRVN
  • Preparation of RVN

2021-04

WG 5 Junji SENZAKI 2024-09
IEC 60749-28 ED2

Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level

47/2661/CDV 2020-04 CCDV
  • CCDV
  • Draft circulated as CDV

2020-11

PRVC
  • PRVC
  • Preparation of RVC

2021-02

WG 2 Jim Lynch 2022-02
IEC 60749-37 ED2

Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer

47/2651/CDV 2020-08 PRVC
  • PRVC
  • Preparation of RVC

2021-01

2021-04

WG 2 Jim Lynch 2021-12
IEC 60749-39 ED2

Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

47/2652/CDV 2020-08 PRVC
  • PRVC
  • Preparation of RVC

2021-01

2021-04

WG 2 Jim Lynch 2021-12
IEC 62435-9 ED1

Electronic components – Long-term storage of electronic semiconductor devices - Part 9: Special Cases

47/2667/CDV 2020-07 CCDV
  • CCDV
  • Draft circulated as CDV

2020-12

PRVC
  • PRVC
  • Preparation of RVC

2021-03

WG 2 Alan Lucero 2022-01
IEC 62830-7 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7- Linear sliding mode triboelectric energy harvesting

47/2676/FDIS 2018-07 CFDIS
  • CFDIS
  • Draft circulated as FDIS

2020-12

PRVD
  • PRVD
  • Preparation of RVD

2021-01

WG 7 Jae Yeong Park 2021-04
IEC 62830-8 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 8- Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics

47/2655/CDV 2019-04 PRVC
  • PRVC
  • Preparation of RVC

2021-01

2021-04

WG 7 Jae Yeong Park 2021-10
IEC 62951-8 ED1

Semiconductor devices - Flexible and stretchable semiconductor devices – Part 8: Test method for stretchability, flexibility and stability of flexible resistive memory

47/2648/CD 2020-07 PCC
  • PCC
  • Preparation of CC

2020-11

2020-12

WG 6 Namsu Kim 2022-05
IEC 62951-9 ED1

Semiconductor devices - Flexible and stretchable semiconductor devices – Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells

47/2656/CD 2020-06 PCC
  • PCC
  • Preparation of CC

2020-12

2021-01

WG 6 Deok-kee Kim 2022-09
IEC 63229 ED1

Semiconductor devices – The classification of defects in gallium nitride epitaxial film on silicon carbide substrate

47/2621/CDV 2018-11 RFDIS
  • RFDIS
  • FDIS received and registered

2021-01

CFDIS
  • CFDIS
  • Draft circulated as FDIS

2021-04

WG 5 Zhihong Feng 2021-06
IEC 63244-1 ED1

Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1 : General requirements and specifications

47/2653/CDV 2019-04 PRVC
  • PRVC
  • Preparation of RVC

2021-01

2021-04

WG 7 Cheolung Cha 2021-12
IEC 63275-1 ED1

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

47/2622/CD 2019-11 TCDV
  • TCDV
  • Translation of CDV

2021-01

CCDV
  • CCDV
  • Draft circulated as CDV

2021-02

WG 5 KOJI YAMAGUCHI 2022-04
IEC 63275-2 ED1

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

47/2623/CD 2019-11 TCDV
  • TCDV
  • Translation of CDV

2021-01

CCDV
  • CCDV
  • Draft circulated as CDV

2021-02

WG 5 KOJI YAMAGUCHI 2022-04
IEC 63284 ED1

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

47/2624/CD 2020-01 TCDV
  • TCDV
  • Translation of CDV

2021-01

CCDV
  • CCDV
  • Draft circulated as CDV

2021-02

WG 5 MANABU YANAGIHARA 2022-04
IEC 63287-1 ED1

Semiconductor devices – Generic semiconductor qualification guidelines – Part 1: Guidelines for LSI reliability qualification

47/2614/CDV 2020-01 AFDIS
  • AFDIS
  • Approved for FDIS

2020-09

2020-12

WG 2 Jim Lynch 2021-08
IEC 63287-2 ED1

Semiconductor devices – Guidelines for reliability qualification plans – Part 2: Concept of Mission profile

47/2635/NP 2020-10 ACD
  • ACD
  • Approved for CD

2020-10

CD
  • CD
  • Draft circulated as CD

2022-09

WG 2 Yoichi Iga 2023-12
IEC TR 63357 ED1

Semiconductor devices - Standardization roadmap of fault test method for automotive vehicles

47/2677/DTR 2020-12 CDTR
  • CDTR
  • Draft circulated as DTR

2020-12

PRVDTR
  • PRVDTR
  • Preparation of RVDTR

2021-02

WG 6 Wonjong KIM 2021-10
IEC 63364-1 ED1

Semiconductor devices – Semiconductor devices for IOT system – Part 1: Test method of sound variation detection

47/2665/NP 2021-01 ACD
  • ACD
  • Approved for CD

2021-01

CD
  • CD
  • Draft circulated as CD

2021-03

WG 6 Hojun Ryu 2023-03