TC 47 |
Semiconductor devices |

Project Reference |
Document Reference |
Init. Date |
Current Stage |
Next Stage |
Working Group |
Project Leader |
Fcst. Publ. Date |
---|---|---|---|---|---|---|---|
PNW 47-2671 ED1
Semiconductor devices - Fault test method for automotive vehicles - Part 1: General conditions and definitions
|
47/2671/NP |
PNW
2020-12 |
PRVN
2021-03 |
WG 1 | Wonjong KIM | 2023-12 | |
PNW 47-2683 ED1
Semiconductor devices - Measurement and evaluation methods of kinetic energy harvesting devices under practical vibration environment - Part 2: Human arm swing motion
|
47/2683/NP |
PNW
2021-01 |
PRVN
2021-04 |
WG 7 | Yuji SUZUKI | 2023-08 | |
PNW 47-2685 ED1
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
|
47/2685/NP |
PNW
2021-01 |
PRVN
2021-04 |
WG 5 | Junji SENZAKI | 2024-09 | |
PNW 47-2689 ED1
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module
|
47/2689/NP |
PNW
2021-02 |
PRVN
2021-05 |
WG 2 | Hidetoshi Nakanishi | 2024-05 | |
IEC 60749-10 ED2
Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
|
2021-03 |
ACDV
2021-03 |
TCDV
2021-05 |
WG 2 | Jim Lynch | 2022-03 | |
IEC 60749-28 ED2
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
|
47/2661/CDV | 2020-04 |
PRVC
2021-02 |
2021-05 |
WG 2 | Jim Lynch | 2022-01 |
IEC 60749-37 ED2
Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer
|
47/2651/CDV | 2020-08 |
PRVC
2021-01 |
2021-04 |
WG 2 | Jim Lynch | 2021-12 |
IEC 60749-39 ED2
Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
|
47/2652/CDV | 2020-08 |
PRVC
2021-01 |
2021-04 |
WG 2 | Jim Lynch | 2021-12 |
IEC 62435-9 ED1
Electronic components – Long-term storage of electronic semiconductor devices - Part 9: Special Cases
|
47/2667/CDV | 2020-07 |
CCDV
2020-12 |
PRVC
2021-03 |
WG 2 | Alan Lucero | 2022-01 |
IEC 62830-8 ED1
Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 8- Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics
|
47/2655/CDV | 2019-04 |
PRVC
2021-01 |
2021-04 |
WG 7 | Jae Yeong Park | 2021-10 |
IEC 62951-8 ED1
Semiconductor devices - Flexible and stretchable semiconductor devices – Part 8: Test method for stretchability, flexibility and stability of flexible resistive memory
|
47/2648/CD | 2020-07 |
PCC
2020-11 |
2020-12 |
WG 6 | Namsu Kim | 2022-05 |
IEC 62951-9 ED1
Semiconductor devices - Flexible and stretchable semiconductor devices – Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
|
47/2656/CD | 2020-06 |
PCC
2020-12 |
2021-01 |
WG 6 | Deok-kee Kim | 2022-09 |
IEC 63229 ED1
Semiconductor devices – Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
|
47/2687/FDIS | 2018-11 |
CFDIS
2021-02 |
PRVD
2021-03 |
WG 5 | Zhihong Feng | 2021-05 |
IEC 63244-1 ED1
Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1 : General requirements and specifications
|
47/2653/CDV | 2019-04 |
PRVC
2021-01 |
2021-04 |
WG 7 | Cheolung Cha | 2021-12 |
IEC 63275-1 ED1
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
|
47/2679/CDV | 2019-11 |
CCDV
2021-02 |
PRVC
2021-05 |
WG 5 | KOJI YAMAGUCHI | 2022-04 |
IEC 63275-2 ED1
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
|
47/2680/CDV | 2019-11 |
CCDV
2021-02 |
PRVC
2021-05 |
WG 5 | KOJI YAMAGUCHI | 2022-04 |
IEC 63284 ED1
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
|
47/2681/CDV | 2020-01 |
CCDV
2021-02 |
PRVC
2021-05 |
WG 5 | MANABU YANAGIHARA | 2022-02 |
IEC 63287-1 ED1
Semiconductor devices – Generic semiconductor qualification guidelines – Part 1: Guidelines for LSI reliability qualification
|
47/2614/CDV | 2020-01 |
AFDIS
2020-09 |
2020-12 |
WG 2 | Jim Lynch | 2021-08 |
IEC 63287-2 ED1
Semiconductor devices – Guidelines for reliability qualification plans – Part 2: Concept of mission profile
|
47/2688/CD | 2020-10 |
CD
2021-02 |
PCC
2021-04 |
WG 2 | Yoichi Iga | 2023-12 |
IEC TR 63357 ED1
Semiconductor devices - Standardization roadmap of fault test method for automotive vehicles
|
47/2677/DTR |
2020-12 |
PRVDTR
2021-02 |
2021-05 |
WG 6 | Wonjong KIM | 2021-10 |
IEC 63364-1 ED1
Semiconductor devices – Semiconductor devices for IOT system – Part 1: Test method of sound variation detection
|
47/2665/NP | 2021-01 |
ACD
2021-01 |
CD
2021-03 |
WG 6 | Hojun Ryu | 2023-03 |
IEC 63373 ED1
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
|
TCDV
2021-02 |
CCDV
2021-03 |
WG 5 | Stephanie Butler | 2022-05 |
