International Standards and Conformity Assessment for all electrical, electronic and related technologies

TC 47

Semiconductor devices

 
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TC 47 Work programme (25)

Project

Reference

Document

Reference

Init.

Date

Current

Stage

Next

Stage

Working

Group

Project

Leader

Fcst. Publ.

Date

PNW 47-2529

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 8- Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics

47/2529/NP PNW
  • PNW
  • New Work Item Proposal

2018-12

PRVN
  • PRVN
  • Preparation of RVN document

2019-03

WG 7 Jae Yeong Park 2021-06
PNW 47-2532

Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1 : General requirements and specifications

prePNW
  • prePNW
  • Preparation of NP

2018-12

PNW
  • PNW
  • Proposed New Work

WG 7 Cheolung Cha 2021-02
IEC 60749-17 ED2

Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

47/2465/CDV 2018-02 RFDIS
  • RFDIS
  • FDIS received and registered

2018-11

CFDIS
  • CFDIS
  • Draft circulated as FDIS

2019-02

WG 2 Jim Lynch 2019-05
IEC 60749-18 ED2

Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)

47/2468/CDV 2018-03 RFDIS
  • RFDIS
  • FDIS received and registered

2018-11

CFDIS
  • CFDIS
  • Draft circulated as FDIS

2019-02

WG 2 Jim Lynch 2019-05
IEC 60749-20-1 ED2

Semiconductor devices - Mechanical and climatic test methods - Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat

47/2488/CDV 2018-05 PRVC
  • PRVC
  • Preparation of RVC

2018-09

2018-12

WG 2 Jim Lynch 2019-10
IEC 60749-41 ED1

Semiconductor devices - Mechanical and climatic test methods - Part 41: Reliability testing methods of non-volatile memory devices

47/2325/CD 2015-10 ACDV
  • ACDV
  • Approved for CDV

2017-11

TCDV
  • TCDV
  • Translation of CDV

2022-01

WG 2 Jim Lynch 2020-01
IEC 62373-1 ED1

Semiconductor devices – Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) - Part 1: Fast BTI Test method

47/2502/CD 2017-08 PCC
  • PCC
  • Preparation of CC

2018-10

2018-11

WG 5 Hideya Matsuyama 2020-03
IEC 62435-3 ED1

Electronic components – Long-term storage of electronic semiconductor devices – Part 3: Data

47/2491/CDV 2011-03 PRVC
  • PRVC
  • Preparation of RVC

2018-10

2019-01

WG 3 Alan Lucero 2019-11
IEC 62435-7 ED1

Long-term storage of electronic components – Part 7: Micro-electromechanical devices

47/2507/CD 2018-06 PCC
  • PCC
  • Preparation of CC

2018-10

2018-11

WG 3 Alan Lucero 2020-02
IEC 62435-8 ED1

Long-term storage of electronic components – Part 8: Passive electronic devices

47/2504/CD 2018-06 ACD
  • ACD
  • Approved for CD

2018-11

2CD
  • 2CD

2019-04

WG 3 Alan Lucero 2020-02
IEC 62779-4 ED1

Semiconductor devices - Semiconductor interface for human body communication- Part 4: Semiconductor interface for capsule endoscopy using human body communication

47/2456/CD 2017-04 TCDV
  • TCDV
  • Translation of CDV

2018-11

CCDV
  • CCDV
  • Draft circulated as CDV

2019-01

WG 6 Byoung Nam Lee 2020-02
IEC 62830-4 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 4: Test and evaluation methods for flexible piezoelectric energy harvesting devices

47/2445/CDV 2015-11 RFDIS
  • RFDIS
  • FDIS received and registered

2018-10

CFDIS
  • CFDIS
  • Draft circulated as FDIS

2019-01

WG 7 Jae Yeong Park 2019-04
IEC 62830-5 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices

47/2471/CD 2015-11 ACDV
  • ACDV
  • Approved for CDV

2018-11

TCDV
  • TCDV
  • Translation of CDV

2019-02

WG 7 Namsu Kim 2020-01
IEC 62830-6 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6 - Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices

47/2508/CDV 2017-09 CCDV
  • CCDV
  • Draft circulated as CDV

2018-10

PRVC
  • PRVC
  • Preparation of RVC

2019-01

WG 7 Jae Yeong Park 2020-01
IEC 62830-7 ED1

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7- linear sliding mode triboelectric energy harvesting

47/2526/CD 2018-07 CD
  • CD
  • Draft circulated as CD

2018-11

PCC
  • PCC
  • Preparation of CC document

2019-02

WG 7 Jae Yeong Park 2021-01
IEC 62951-2 ED1

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 2: Acceleration test for electron mobility, sub-threshold swing, and threshold voltage of flexible devices

47/2398/CDV 2015-11 TFDIS
  • TFDIS
  • Translation of FDIS

2018-11

DECFDIS
  • DECFDIS
  • FDIS at Editing Check

2019-01

WG 7 Hojun Ryu 2019-08
IEC 62951-4 ED1

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 4: Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices

47/2415/CDV 2015-11 RFDIS
  • RFDIS
  • FDIS received and registered

2018-11

CFDIS
  • CFDIS
  • Draft circulated as FDIS

2019-02

WG 6 Sung-Hoon Choa 2019-05
IEC 62951-5 ED1

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials

47/2464/CDV 2015-11 RFDIS
  • RFDIS
  • FDIS received and registered

2018-12

CFDIS
  • CFDIS
  • Draft circulated as FDIS

2019-02

WG 6 Jungchul Lee 2019-05
IEC 62951-6 ED1

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 6: Test method for sheet resistance of flexible conducting films

47/2428/CDV 2015-11 TFDIS
  • TFDIS
  • Translation of FDIS

2018-11

DECFDIS
  • DECFDIS
  • FDIS at Editing Check

2019-01

WG 6 Hojun Ryu 2019-07
IEC 62951-7 ED1

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 7: Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor

47/2503/FDIS 2016-07 RFDIS
  • RFDIS
  • FDIS received and registered

2018-11

CFDIS
  • CFDIS
  • Draft circulated as FDIS

2019-01

WG 6 Namsu Kim 2019-04
IEC 63068-1 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

47/2474/CDV 2016-07 DECPUB
  • DECPUB
  • Publication at Editing Check

2018-12

RPUB
  • RPUB
  • Text for PUB received and registered

2019-01

WG 5 Jun-ichi Ohno 2019-04
IEC 63068-2 ED1

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

47/2475/CDV 2017-08 DECPUB
  • DECPUB
  • Publication at Editing Check

2018-12

RPUB
  • RPUB
  • Text for PUB received and registered

2019-01

WG 5 Jun-ichi Ohno 2019-04
IEC 63068-3 ED1

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

47/2527/CD 2018-08 CD
  • CD
  • Draft circulated as CD

2018-12

PCC
  • PCC
  • Preparation of CC document

2019-03

WG 5 Junji SENZAKI 2021-04
IEC 63150-1 ED1

Semiconductor devices - Measurement and evaluation methods of kinetic energy harvesting devices under practical vibration environment - Part 1: Arbitrary and random mechanical vibrations

47/2448/CDV 2017-07 TFDIS
  • TFDIS
  • Translation of FDIS

2018-12

DECFDIS
  • DECFDIS
  • FDIS at Editing Check

2019-01

WG 7 Yuji SUZUKI 2019-08
IEC 63229 ED1

Semiconductor devices – The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate

47/2528/CD 2018-11 CD
  • CD
  • Draft circulated as CD

2018-12

PCC
  • PCC
  • Preparation of CC document

2019-03

WG 5 Zhihong Feng 2021-04