International
Electrotechnical
Commission
International Standards and Conformity Assessment
for all electrical, electronic and related technologies
SC 47E |
Discrete semiconductor devices |
Detail
Committee | Working Groups | Project Leader | Current Status | Frcst Pub Date | Stability Date |
|---|---|---|---|---|---|
| SC 47E | 03 | PPUB | 2014 |
History
Stage | Document | Downloads | Decision Date | Target Date |
|---|---|---|---|---|
| PNW | 1988-02-01 | |||
| ANW | 1988-02-02 | |||
| 1CD | 1988-11-01 | |||
| ADIS | 1989-10-06 | |||
| CDIS | 1991-10-11 | |||
| APUB | 1992-08-28 | |||
| BPUB | 1993-03-16 | |||
| PPUB | 1993-10-08 | |||
Project
IEC 60747-2-2 Ed. 1.0
Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section 2: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
Remark:
- QC 750109. - Transferred from TC 47. - Former 47.2.19.