International Standards and Conformity Assessment for all electrical, electronic and related technologies

SC 47F

Micro-electromechanical systems

 
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SC 47F Work programme (8)

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IEC 62047-27 Ed. 1.0  

Semiconductor devices - Micro-electromechanical devices - Part 27: Bond strength test for glass frit bonded structures using micro-chevron-tests (MCT)
47F/230A/CDV2014-02APUB
  • APUB
  • Draft approved for publication

2016-09

DEC
  • DEC
  • Draft at Editing Check

2016-11

WG 2L. Stühler2017-04
IEC 62047-28 Ed. 1.0  

Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices
47F/242/CDV2014-08RDIS
  • RDIS
  • Text for FDIS received and registered

2016-09

CDIS
  • CDIS
  • Draft circulated as FDIS

2016-12

WG 3Y. Suzuki2017-03
IEC 62047-29 Ed. 1.0  

Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
47F/243/CD2015-11ACDV
  • ACDV
  • Draft approved for Committee Draft with Vote

2016-08

CCDV
  • CCDV
  • Draft circulated as Committee Draft with Vote

2016-11

WG 2J H Kim, H J Lee2017-12
IEC 62047-30 Ed. 1.0  

Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film
47F/241/CD2015-11ACDV
  • ACDV
  • Draft approved for Committee Draft with Vote

2016-08

CCDV
  • CCDV
  • Draft circulated as Committee Draft with Vote

2016-11

WG 2I. Kanno2017-11
IEC 62047-31 Ed. 1.0  

Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials
47F/246/NP2016-09ANW
  • ANW
  • Approved New Work

2016-09

1CD
  • 1CD
  • 1st Committee Draft

2017-01

WG 2J. H Kim, Dr. H. J. Lee2019-12
PNW 47F-255 Ed. 1.0  

Future IEC 62047-32: Semiconductor devices - Micro-electromechanical devices - Part 32: Test method for the nonliear vibration of the MEMS resonators
47F/255/NP PNW
  • PNW
  • Proposed New Work

2016-08

ANW
  • ANW
  • Approved New Work

2017-01

WG 3Q. F. Li 
PNW 47F-256 Ed. 1.0  

Future IEC 62047-33: Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device
47F/256/NP PNW
  • PNW
  • Proposed New Work

2016-08

ANW
  • ANW
  • Approved New Work

2017-01

WG 3W. Zhang 
PNW 47F-257 Ed. 1.0  

Future IEC 62047-34: Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for wafer level MEMS piezoresistive pressure-sensitive device
47F/257/NP PNW
  • PNW
  • Proposed New Work

2016-08

ANW
  • ANW
  • Approved New Work

2017-01

WG 3W. Zhang