International
Electrotechnical
Commission
International Standards and Conformity Assessment
for all electrical, electronic and related technologies
SC 47E |
Discrete semiconductor devices |
SC 47E Project files
 Project Reference |  Current Stage | Language | Frcst Date | CLC | Document Reference | Downloads |
|---|---|---|---|---|---|---|
PNW 47E-3-6 Ed. 1.0Amendment to IEC 747-3 - Measuring methods, forward recovery time of a rectifier diode or a signal diode | DEL
| E | 47E(US)2 | |||
PNW 47E-29 Ed. 1.0Revised letter symbol of integrated circuit microwave amplifiers - Amendment to IEC 748-3 | DEL
| E | 47E/29 | |||
PNW 47E-45 Ed. 1.0IEC 747 - Part 9: Insulated gate bipolar transistors (IGBTs) -
Section 1: Blank detail specification for IGBTs for switching
applications
| DEL
| E | 47E/45 | |||
PNW 47E-82 Ed. 1.0Amendment to IEC 747-1 - Thermal power cycle test | DEL
| E | 47E/82 | |||
PNW 47E-86 Ed. 1.0Amendment to IEC 747-4 - Measuring methods for integrated circuit
microwave frequency converters
| DEL
| E | 47E/86 | |||
PNW 47E-87 Ed. 1.0Amendment to IEC 747-4 - Terminology, essential ratings and
characteristics for integrated circuit microwave frequency
converters
| DEL
| E | 47E/87 | |||
PNW 47E-179 Ed. 1.0Semiconductor devices, Discrete devices, Semiconductor flow sensor
| DEL
| E | 47E/179 | |||
PNW 47E-297 Ed. 1.0Semiconductor devices - Discrete devices - Part 16-5: Microwave integrated circuits - Oscillators | DEL
| E | 47E/297 | |||
PNW 47E-299 Ed. 1.0Semiconductor devices - Discrete Devices - Part 14-6: Semiconductor sensors - Test method of CMOS image sensor module | DEL
| E | 47E/299 | |||
PNW 47E-312 Ed. 1.0Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators | DEL
| E | 47E/312 | |||
PNW 47E-328 Ed. 1.0Semiconductor devices - Discrete devices - Part 14-x: Semiconductor sensors - Test method of CMOS image sensor module | DEL
| E | 47E/328 | |||
PNW 47E-329 Ed. 1.0Semiconductor devices - Discrete devices - Part 14-7: Semiconductor sensors - Humidity | DEL
| E | 47E/329 | |||
PNW 47E-352 Ed. 1.0Semiconductor devices - magnetic and capacitive coupler for safe isolation | DEL
| E | 47E/352 | |||
IEC 60747-2 Ed. 1.0Semiconductor devices. Discrete devices. Part 2: Rectifier
diodes
| DELPUB
| B | ||||
IEC 60747-2 Ed. 2.0Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes | PPUB
| B | Webstore | |||
IEC 60747-2 Ed. 3.0Semiconductor devices - Discrete devices and integrated circuits - Part 2 : Rectifier diodes | AMW
| B | 2014-09 | no | 47E/438 | |
IEC 60747-2 am1 Ed. 1.0Amendment No. 1 | DELPUB
| B | ||||
IEC 60747-2 am2 Ed. 1.0Amendment No. 2 | DELPUB
| B | ||||
IEC 60747-2 am3 f2 Ed. 1.0Rectifier diodes, terms related to ratings and characteristics,
to be included in IEC 747-2
| MERGED
| E | 47(DE)795 | |||
IEC 60747-2 am3 f3 Ed. 1.0Amendment to IEC 747-2 - Essential ratings and characteristics:
New Sub-clauses 7.10 and 7.11
| MERGED
| E | 47(DE)798 | |||
IEC 60747-2-1 Ed. 1.0Semiconductor devices. Discrete devices - Part 2: Rectifier
diodes - Section One: Blank detail specification for rectifier
diodes (including avalanche rectifier diodes), ambient and
case-rated, up to 100 A
| WPUB
| B | ||||
IEC 60747-2-1 Ed. 2.0Systematic review of IEC 747-2-1 (1989)
| DEL
| B | ||||
IEC 60747-2-2 Ed. 1.0Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section 2: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A | PPUB
| B | Webstore | |||
IEC 60747-3 Ed. 1.0Semiconductor devices. Discrete devices. Part 3: Signal
(including switching) and regulator diodes
| PPUB
| B | Webstore | |||
IEC 60747-3 Ed. 2.0Semiconductor devices - Part 3: Discrete devices - Signal, switching and regulator diodes
| RDIS
| B | 2013-07 | no | ||
IEC 60747-3 am1 Ed. 1.0Amendment No. 1 | PPUB
| B | Webstore | |||
IEC 60747-3 am2 Ed. 1.0Amendment No. 2 | PPUB
| B | Webstore | |||
IEC 60747-3-1 Ed. 1.0Semiconductor devices. Discrete devices - Part 3: Signal
(including switching) and regulator diodes - Section One: Blank
detail specification for signal diodes, switching diodes and
controlled-avalanche diodes
| WPUB
| B | ||||
IEC 60747-3-1 Ed. 2.0Systematic review of IEC 747-3-1 (1986)
| DEL
| B | ||||
IEC 60747-3-2 Ed. 1.0Semiconductor devices. Discrete devices - Part 3: Signal
(including switching) and regulator diodes - Section Two: Blank
detail specification for voltage-regulator diodes and
voltage-reference diodes,excluding temperature-compensated
precision reference diodes
| WPUB
| B | ||||
IEC 60747-3-2 Ed. 2.0Systematic review of IEC 747-3-2 (1986)
| DEL
| B | ||||
IEC 60747-4 Ed. 1.0Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors | DELPUB
| B | ||||
IEC 60747-4 Ed. 1.2Semiconductor devices - Discrete devices - Part 4: Microwave devices | DELPUB
| B | ||||
IEC 60747-4 Ed. 2.0Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors | PPUB
| B | 2007-09 | no | Webstore | |
IEC 60747-4 f2 Ed. 2.0Terminology and letter symbols for integrated circuit microwave
frequency prescalers to be included in IEC 747-4
| MERGED
| E | 47E/31 | |||
IEC 60747-4 f3 Ed. 2.0Measuring methods for integrated circuit microwave frequency
prescalers to be included in IEC 747-4
| MERGED
| E | 47E/32 | |||
IEC 60747-4 am1 Ed. 1.0Amendment No. 1 | DELPUB
| B | ||||
IEC 60747-4 am2 Ed. 1.0Amendment 2 | DELPUB
| E | 1999-04 | |||
IEC 60747-4 am2 f2 Ed. 1.0Essential ratings and characteristics for integrated circuit microwave amplifiers, to be included in IEC 747-4 | MERGED
| E | 47E(Sec.)2 | |||
IEC 60747-4 am2 f3 Ed. 1.0Additional essential ratings and characteristics for microwave field effect transistors into IEC 747-4 | MERGED
| B | ||||
IEC 60747-4 am2 f4 Ed. 1.0Revised and additional measuring methods for microwave field effect transistors - Amendment to Document 47(C.O.)1261 | MERGED
| B | 47E(Sec.)4 | |||
IEC 60747-4 am2 f6 Ed. 1.0Measuring methods of integrated circuit microwave amplifiers, to be included in IEC 747-4 | MERGED
| E | ||||
IEC 60747-4-1 Ed. 1.0Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification | WPUB
| E | 1996-12 | |||
IEC 60747-4-2 Ed. 1.0Semiconductor devices - Discrete devices - Part 4-2: Microwave diodes and transistors - Integrated-circuit microwave amplifiers - Blank detail specification
| WPUB
| E | 1998-10 | |||
DEL 60747-4-4 Ed. 1.0Semiconductor devices - Generic specification for microwave
field effect transistors
| DEL
| E | 47(FR)864 | |||
DEL 60747-5-1 Ed. 1.0Blank detail specification for optocouplers/photocouplers (with
output transistor)
| DEL
| E | ||||
IEC 60747-5-1 Ed. 1.0Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices - General
| PPUB
| B | Webstore | |||
IEC 60747-5-1 Ed. 1.2Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices - General | PPUB
| B | Webstore | |||
IEC 60747-5-1 am1 Ed. 1.0Amendment 1
| PPUB
| B | Webstore | |||
IEC 60747-5-1 am2 Ed. 1.0Amendment 2 | PPUB
| B | yes | Webstore | ||
IEC 60747-5-2 Ed. 1.0Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics
| PPUB
| B | Webstore | |||
IEC 60747-5-2 Ed. 1.1Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics | PPUB
| B | Webstore | |||
IEC 60747-5-2 am1 Ed. 1.0Amendment 1
| PPUB
| B | yes | Webstore | ||
IEC 60747-5-3 Ed. 1.0Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
| PPUB
| B | Webstore | |||
IEC 60747-5-3 Ed. 1.1Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods | PPUB
| B | Webstore | |||
IEC 60747-5-3 am1 Ed. 1.0Amendment 1 | PPUB
| B | yes | Webstore | ||
IEC 60747-5-4 Ed. 1.0Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers | PPUB
| B | no | Webstore | ||
IEC 60747-5-5 Ed. 1.0Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers | PPUB
| B | 2007-10 | no | Webstore | |
IEC 60747-5-5 am1 Ed. 1.0Amendment 1 to IEC 60747-5-5 Ed.1: Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers | APUB
| B | 2013-08 | no | ||
IEC 60747-5-6 Ed. 1.0Semiconductor devices - Discrete devices - Part 5-6: Optoelectronic devices - Light emitting diodes
| CDM
| E | 2013-09 | no | ||
IEC 60747-5-7 Ed. 1.0Semiconductor devices - Discrete devices - Part 5-7: Photodiodes and phototransistors
| CDM
| E | 2013-09 | no | ||
IEC 60747-6 Ed. 1.0Semiconductor devices. Discrete devices. Part 6: Thyristors
| DELPUB
| B | ||||
IEC 60747-6 Ed. 2.0Semiconductor devices - Part 6: Thyristors
| PPUB
| B | Webstore | |||
IEC 60747-6 Ed. 3.0Semiconductor devices - Discrete devices - Part 6 : Thyristors | A2CD
| E | 2014-03 | no | ||
IEC 60747-6 am1 Ed. 1.0Amendment No. 1 | DELPUB
| B | ||||
IEC 60747-6 am2 Ed. 1.0Amendment No. 2 | DELPUB
| B | ||||
IEC 60747-6 am3 f1 Ed. 1.0Revision of Clause 2, Thermal measurements of IEC 747-6, Chapter IV | MERGED
| B | ||||
IEC 60747-6 am3 f2 Ed. 1.0Addition to Document 47(Sec.)1150: Revision of Clause 2, Thermal
measurements of IEC 747-6, Chapter IV
| DEL
| E | ||||
IEC 60747-6 am3 f4 Ed. 1.0Measuring the turn-off behaviour of GTO-thyristors | MERGED
| B | ||||
IEC 60747-6-1 Ed. 1.0Semiconductor devices. Discrete devices - Part 6: Thyristors -
Section One: Blank detail specification for reverse blocking
triode thyristors, ambient and case-rated, up to 100 A
| WPUB
| B | ||||
IEC 60747-6-1 Ed. 2.0Systematic review of IEC 747-6-1 (1989)
| DEL
| B | ||||
IEC 60747-6-2 Ed. 1.0Semiconductor devices. Discrete devices - Part 6: Thyristors -
Section Two: Blank detail specification for bidirectional triode
thyristors (triacs), ambient or case-rated, up to 100 A
| WPUB
| B | ||||
IEC 60747-6-2 Ed. 2.0Systematic review of IEC 747-6-2 (1991)
| DEL
| B | ||||
IEC 60747-6-3 Ed. 1.0Semiconductor devices - Discrete devices - Part 6: Thyristors - Section Three: Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A | PPUB
| B | Webstore | |||
IEC 60747-7 Ed. 1.0Semiconductor devices. Discrete devices. Part 7: Bipolar
transistors
| DELPUB
| B | ||||
IEC 60747-7 Ed. 2.0Semiconductor discrete devices and integrated circuits - Part 7: Bipolar transistors
| DELPUB
| B | 2000-07 | |||
IEC 60747-7 Ed. 3.0Semiconductor devices - Discrete devices - Part 7: Bipolar transistors | PPUB
| B | 2011-01 | no | Webstore | |
IEC 60747-7 am1 Ed. 1.0Amendment No. 1 | DELPUB
| B | ||||
IEC 60747-7 am2 Ed. 1.0Amendment No. 2 | DELPUB
| B | ||||
IEC 60747-7 am3 f1 Ed. 1.0New concepts and letter symbols for insulated-gate bipolar transistors and (true) bipolar transistors, adaptations in existing standards (IGBT'S) | MERGED
| B | ||||
IEC 60747-7 am3 f4 Ed. 1.0Amendment to the scope of IEC 747-7 | MERGED
| E | 47(DE)796 | |||
IEC 60747-7 am3 f6 Ed. 1.0Supplement to IEC 747-7 - Pulse methods for collector-base cut-off current and emitter-base cut-off current | MERGED
| E | 47E(Sec.)5 | |||
IEC 60747-7 am3 f7 Ed. 1.0Supplement to Chapter IV of IEC 747-7 - Measuring method for
noise figure and power gain of bipolar transistors
| DEL
| E | ||||
IEC 60747-7 am3 f8 Ed. 1.0Supplement to Chapter IV of IEC 747-7 - Measuring method for
R.F. output power gain of a bipolar power transistors
| DEL
| E | ||||
IEC 60747-7 am3 f9 Ed. 1.0Supplement to Chapter IV of IEC 747-7 - Measuring method for
mixer power gain of a bipolar transistors
| DEL
| E | ||||
IEC 60747-7-1 Ed. 1.0Semiconductor devices. Discrete devices - Part 7: Bipolar
transistors - Section One: Blank detail specification for
ambient-rated bipolar transistors for low and high-frequency
amplification
| WPUB
| B | ||||
IEC 60747-7-1 Ed. 2.0Systematic review of IEC 747-7-1 (1989)
| DEL
| B | ||||
IEC 60747-7-2 Ed. 1.0Semiconductor devices. Discrete devices - Part 7: Bipolar
transistors - Section Two: Blank detail specification for
case-rated bipolar transistors for low-frequency amplification
| WPUB
| B | ||||
IEC 60747-7-2 Ed. 2.0Systematic review of IEC 747-7-2 (1989)
| DEL
| B | ||||
IEC 60747-7-3 Ed. 1.0Semiconductor devices. Discrete devices - Part 7: Bipolar
transistors - Section three: Blank detail specification for
bipolar transistors for switching applications
| WPUB
| B | ||||
IEC 60747-7-3 Ed. 2.0Systematic review of IEC 747-7-3 (1991)
| DEL
| B | ||||
IEC 60747-7-4 Ed. 1.0Semiconductor devices. Discrete devices - Part 7: Bipolar
transistors - Section Four: Blank detail specification for
case-rated bipolar transistors for high-frequency amplification
| WPUB
| B | ||||
IEC 60747-7-4 Ed. 2.0Systematic review of IEC 747-7-4 (1991)
| DEL
| B | ||||
IEC 60747-7-5 Ed. 1.0Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications | DELPUB
| E | 2005-08 | no | ||
IEC 60747-8 Ed. 1.0Semiconductor devices. Discrete devices. Part 8: Field-effect
transistors
| DELPUB
| B | ||||
IEC 60747-8 Ed. 2.0Semiconductor devices - Part 8: Field-effect transistors | DELPUB
| B | 2000-07 | |||
IEC 60747-8 Ed. 3.0Semiconductor devices - Discrete devices - Part 8: Field-effect transistors | PPUB
| B | 2010-12 | no | Webstore | |
IEC 60747-8 am1 Ed. 1.0Amendment No. 1 | DELPUB
| B | ||||
IEC 60747-8 am2 Ed. 1.0Amendment No. 2 | DELPUB
| B | ||||
IEC 60747-8 am3 f2 Ed. 1.0Additional ratings and characteristics and amendments in the measuring methods for power switching field-effect transistors, to be included in IEC 747-8 | MERGED
| B | 47(Sec.)1285 | |||
IEC 60747-8 am3 f3 Ed. 1.0Additional concepts for field-effect transistors in IEC 747-8 | MERGED
| E | 47(Sec.)1312 | |||
IEC 60747-8 am3 f4 Ed. 1.0Terminology - Revised and new concepts for field-effect transistors in IEC 747-1 and 747-8 | MERGED
| B | ||||
IEC 60747-8 am3 f5 Ed. 1.0Transfer of terms and letter symbols applicable to field-effect transistors contained in IEC 747-7, Sub-clauses 6.4.2.2, 6.4.2.3 to IEC 747-8, Sub-clause 4.3.5 | MERGED
| E | 47(U.K.)1114 | |||
IEC 60747-8-1 Ed. 1.0Semiconductor devices. Discrete devices - Part 8: Field-effect
transistors - Section One: Blank detail specification for
single-gate field-effect transistors up to 5 W and 1 GHz
| WPUB
| B | ||||
IEC 60747-8-1 Ed. 2.0Systematic review of IEC 747-8-1 (1987)
| DEL
| B | ||||
IEC 60747-8-2 Ed. 1.0Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section two: Blank detail specification for field-effect transistors for case-rated power amplifier applications | PPUB
| B | Webstore | |||
IEC 60747-8-3 Ed. 1.0Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field effect transistors for switching applications | PPUB
| B | Webstore | |||
IEC 60747-8-4 Ed. 1.0Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications | PPUB
| B | no | Webstore | ||
IEC 60747-9 Ed. 1.0Surface mounting technology - Discrete devices - Part 9:
Insulated-gate bipolar transistors (IGBTs)
| DELPUB
| B | 1998-08 | |||
IEC 60747-9 Ed. 1.1Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) | DELPUB
| B | ||||
IEC 60747-9 Ed. 2.0Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) | PPUB
| B | 2007-10 | no | Webstore | |
IEC 60747-9 f2 Ed. 1.0Discrete devices - Terminology - Concepts related to insulated-gate bipolar transistors, IGBT's | MERGED
| B | 47(C.O.)1339 | |||
IEC 60747-9 am1 Ed. 1.0Amendment 1 | DELPUB
| B | 2001-09 | no | ||
IEC 60747-9 am2 Ed. 1.0Amendment to IEC 60747-9 - IGBTs | DEL
| E | 47E/100 | |||
IEC 60747-10 Ed. 2.0Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits | PPUB
| B | Webstore | |||
IEC 60747-10 am1 Ed. 2.0Amendment No. 1 | DELPUB
| B | ||||
IEC 60747-10 am2 Ed. 2.0Amendment No. 2 | DELPUB
| B | ||||
IEC 60747-10 am3 Ed. 2.0Amendment No. 3 | PPUB
| B | Webstore | |||
IEC 60747-11 Ed. 1.0Semiconductor devices. Discrete devices. Part 11: Sectional
specification for discrete devices
| PPUB
| B | Webstore | |||
IEC 60747-11 Ed. 2.0Systematic review to IEC 747-11 (1985) | DEL
| B | ||||
IEC 60747-11 am1 Ed. 1.0Amendment No. 1 | PPUB
| B | Webstore | |||
IEC 60747-11 am2 Ed. 1.0Amendment No. 2 | PPUB
| B | Webstore | |||
IEC 60747-11 am2 f2 Ed. 1.0Inclusion of visual standards for discrete semiconductor devices
in IEC 747-11
| DEL
| E | ||||
IEC 60747-11 am2 f3 Ed. 1.0Amendment to IEC 747-11 to include a procedure for qualification approval of small lots | MERGED
| B | ||||
IEC 60747-14 f2 Ed. 1.0Essential ratings and characteristics for semiconductor pressure sensor elements | MERGED
| E | ||||
IEC 60747-14 f3 Ed. 1.0Terminology - Concepts and letter symbols for semiconductor pressure sensors | MERGED
| E | 47(Sec.)1253 | |||
IEC 60747-14 f4 Ed. 1.0General rules and methods of measurement for mini-mold type Hall sensors | MERGED
| E | ||||
IEC 60747-14 f5 Ed. 1.0Semiconductor temperature sensors, concepts and letter symbols | MERGED
| E | 47(DE)797 | |||
IEC 60747-14-1 Ed. 1.0Semiconductor devices - Part 14-1: Semiconductor sensors - General and classification | DELPUB
| E | 2000-10 | |||
IEC 60747-14-1 Ed. 2.0Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors | PPUB
| B | 2010-01 | no | Webstore | |
IEC 60747-14-2 Ed. 1.0Semiconductor devices - Part 14-2: Semiconductor sensors - Hall elements | PPUB
| E | Webstore | |||
IEC 60747-14-3 Ed. 1.0Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors
| DELPUB
| E | 2001-07 | no | ||
IEC 60747-14-3 Ed. 2.0Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors | PPUB
| B | 2009-04 | no | Webstore | |
IEC 60747-14-4 Ed. 1.0Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers | PPUB
| B | 2011-02 | no | Webstore | |
IEC 60747-14-5 Ed. 1.0Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor | PPUB
| B | 2010-02 | no | Webstore | |
IEC 60747-14-6 Ed. 1.0Semiconductor devices - Part 14-6: Semiconductor sensors - Humidity sensor | ANW
| E | 2014-07 | 47E/424 | ||
IEC 60747-14-7 Ed. 1.0Semiconductor devices - Part 14-7: Semiconductor sensors - Flow meter | ANW
| E | 2014-07 | 47E/425 | ||
IEC 60747-14-8 Ed. 1.0Semiconductor devices - Part 14-8: Semiconductor sensors - Capacitive degradation sensor of liquid | ANW
| E | 2014-07 | 47E/426 | ||
IEC 60747-15 Ed. 1.0Discrete semiconductor devices - Part 15: Isolated power semiconductor devices | DELPUB
| E | 2003-06 | no | ||
IEC 60747-15 Ed. 2.0Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices | PPUB
| B | 2011-01 | yes | Webstore | |
BPUB
| F | 2013-02 | ||||
IEC 60747-16-1 Ed. 1.0Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers | PPUB
| B | yes | Webstore | ||
IEC 60747-16-1 Ed. 1.1Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers | PPUB
| E | Webstore | |||
IEC 60747-16-1 fF Ed. 1.0Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers | MERGED
| F | 2012-05 | |||
IEC 60747-16-1 am1 Ed. 1.0Amendment 1 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers | PPUB
| B | 2006-08 | yes | Webstore | |
IEC 60747-16-1 am1 fF Ed. 1.0Amendment 1 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers | MERGED
| F | 2012-03 | |||
IEC 60747-16-2 Ed. 1.0Semiconductor devices - Part 16-2: Microwave integrated circuits - Frequency prescalers | PPUB
| E | Webstore | |||
IEC 60747-16-2 Ed. 1.1Semiconductor devices - Part 16-2: Microwave integrated circuits - Frequency prescalers | PPUB
| E | Webstore | |||
IEC 60747-16-2 am1 Ed. 1.0Amendment 1 - Semiconductor devices - Part 16-2: Microwave integrated circuits - Frequency prescalers | PPUB
| E | 2007-11 | no | Webstore | |
IEC 60747-16-3 Ed. 1.0Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters | PPUB
| B | yes | Webstore | ||
IEC 60747-16-3 Ed. 1.1Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters | PPUB
| B | Webstore | |||
IEC 60747-16-3 fF Ed. 1.0Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters | MERGED
| F | 2010-04 | |||
IEC 60747-16-3 am1 Ed. 1.0Amendment 1 - Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters | PPUB
| B | 2009-03 | yes | Webstore | |
IEC 60747-16-3 am1 fF Ed. 1.0Amendment 1 - Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters | MERGED
| F | 2010-04 | |||
IEC 60747-16-4 Ed. 1.0Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches | PPUB
| B | yes | Webstore | ||
IEC 60747-16-4 Ed. 1.1Semiconductor - devices - Part 16-4: Microwave integrated circuits - Switches | PPUB
| B | Webstore | |||
IEC 60747-16-4 fF Ed. 1.0Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches | MERGED
| F | 2011-06 | |||
IEC 60747-16-4 ff Ed. 1.1Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches | MERGED
| B | ||||
IEC 60747-16-4 am1 Ed. 1.0Amendment 1 - Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches | PPUB
| B | 2009-03 | yes | Webstore | |
IEC 60747-16-4 am1 fF Ed. 1.0Amendment 1 - Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches | MERGED
| F | 2011-06 | |||
IEC 60747-16-5 Ed. 1.0Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators | RDIS
| B | 2013-06 | yes | ||
IEC 60747-16-10 Ed. 1.0Semiconductor devices - Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits | PPUB
| B | yes | Webstore | ||
IEC 60747-16-10 fF Ed. 1.0Semiconductor devices - Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits | MERGED
| F | 2012-09 | |||
IEC 60747-17 Ed. 1.0Future IEC 60747-17 Ed. 1.0: Semiconductor devices - Discrete devices - Part 17: Magnetic and capacitive coupler for basic and reinforced isolation | DEL
| E | 47E/413 | |||
IEC/PAS 60747-17 Ed. 1.0Semiconductor devices - Discrete devices - Part 17: Magnetic and capacitive coupler for basic and reinforced isolation
| PPUB
| E | 2011-10 | Webstore |
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